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III-IV Semiconductors- Dr Ian Farrer (SP)

MBE technology has played a crucial role in the development of nanostructures enabling the study of electron interactions at low temperatures. This talk will present an overview of Molecular Beam Epitaxy with particular reference to III-V materials in a research setting. The operation of a III-V growth system will be described with emphasis on the production of very high purity structures and the constraints that this imposes. The procedure for access to either existing wafer material or new sample requests will also be outlined.
When Nov 24, 2011
from 02:30 PM to 03:30 PM
Where Mott Seminar Room
Contact Name
Contact Phone 01223 764822
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